Aluminum Nitride Ceramic (AlN) is an ideal material widely used in situations that demand both high thermal conductivity and electrical insulation. This unique ability makes AIN ideal for managing rapid heating and removal of heat from other components and systems, such as in heat sinks, heat exchanger and spreaders.
In addition, its low coefficient of thermal expansion, which is similar to silicon material, means AIN is a trusted substance for use in semiconductor products. The material remains highly stable through a wide range of temperatures.
Properties | Units | Value |
Color | Grey | |
Mechanical Properties | ||
Density | g/cm3 | 3.26 |
Modulus of Elasticity | GPa | 310 |
Fracture toughness | Mpa x m^1/2 | 3.5 |
Poissons Ratio | 0.25 | |
Compressive Strength | MPa | 2100 |
Flexural Strength | MPa | 335 |
Hardness (Knoop 100 g) | Kg/mm2 | 1170 |
Hardness (Vickers) | GPa | 11 |
Thermal Properties | ||
Maximum Temperature * | ||
Oxidizing | °C | 700 |
Inert | °C | 1300 |
Thermal Conductivity | ||
@ 25°C | W/mK | 180 |
@ 300°C | W/mK | 130 |
Specific Heat | J/kg.K | 750 |
Thermal Shock Resistance ΔT | °C | 400 |
Coefficient of Expansion | ||
CTE 25°C ➞ 100°C | 10^-6/°C | 3.6 |
CTE 25°C ➞ 300°C | 10^-6/°C | 4.6 |
CTE 25°C ➞ 500°C | 10^-6/°C | 5.2 |
CTE 25°C ➞ 1000°C | 10^-6/°C | 5.6 |
Electrical Properties | ||
Dielectric Constant | 1 MHz | 8.6 |
Loss Tangent | 1 MHz | 5×10^-4 |
Dielectric Strength | kV/mm | >15 |
Volume Resistivity | ||
25°C | Ω cm | >10^13 |
300°C | Ω cm | 10^9 |
500°C | Ω cm | 10^7 |
Aluminum Nitride Ceramics exhibit exceptional characteristics, making them useful in various applications.
- High thermal conductivity combined with good electrical insulation characteristics.
- Exceptional stability when exposed to many molten salts.
- Thermal stability up to at least 1500°C
- Favorable mechanical characteristics extending into the high temperature range.
- Low thermal expansion and resistance to thermal shock.
- Special optical and acoustic characteristics.