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Aluminum Nitrides (AlN) nozzles for Plasma Etch Equipment

High-Resistance Process-Grade Aluminum Nitride (AlN) is an ideal material for many semiconductor equipment and applications.

Innovacera designs Aluminum Nitrides (AlN) nozzles for precise gas flow rate and uniform control to evenly disperse gases into the etch process chamber. These components require high plasma resistance, dielectric strength, and strong corrosion resistance to the process gases and byproducts.

Aluminum Nitride Material Properties
Properties INC-AN180 INC-AN200 INC-AN220
Color Gray Gray Beige
Main Content 96%ALN 96%ALN 97%ALN
Main Characteristics High Thermal Conductivity, Excellent Plasma Resistance
Main Applications Heat Dissipating Parts, Plasma Resistance Parts
Bulk Density 3.30 3.30 3.28
Water Absorption 0.00 0.00 0.00
Vickers Hardness(Load 500g) 10.00 9.50 9.00
Flexural Strength >=350 >=325 >=280
Compressive Strength 2,500.00 2,500.00
Young’s Modulus of Elasticity 320.00 320.00 320.00
Poisson’s Ratio 0.24 0.24 0.24
Fracture Toughness
Coefficient Linear Thermal Expansion 40-400 degree Celsius 4.80 4.60 4.50
Thermal Conductivity 20 degree Celsius 180.00 200.00 220.00
Specific Heat 0.74 0.74 0.76
Thermal Shocking Resistance
Volume Resistivity 20 degree Celsius >=10-14 >=10-14 >=10-13
Dielectric Strength >=15 >=15 >=15
Dielectric Constant 1MHz 9.00 8.80 8.60
Loss Tangent *10-4 5.00 5.00 6.00
Remark: The value is just for review, different using conditions will have a little difference.

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Aluminum Nitrides (AlN) nozzles for Plasma Etch Equipment

Aluminum Nitrides (AlN) nozzles for Plasma Etch Equipment