technical ceramic solutions

AMB for new generation semiconductor

When perform brazing (for example, Ag) in the H2 environment and it requires extreme heat and energy cycle resistance, with unique high and low temperature impact resistance, AMB substrates become an ideal packaging material for new generation semiconductor (SIC) and new high power electronic devices, it retains good thermal stability even beyond 1000 cycles.

The copper thickness is 0.1-0.5mm, provides very high ampacity and very good heat spreading. This makes it a preferred material for the applications:
-IGBT
-Power Modules
-Automotive Power Electronics
-Renewable Energy
-Space and Industrial
-Others

Aluminum Nitride AMB

Aluminum Nitride AMB

 


Declaration: This is an original article of INNOVACERA®. Please indicate the source link when reprinting: https://www.innovacera.com/news/amb-for-new-generation-semiconductor.html.

Related Products

  • Zirconia Ceramic Slotted Blades for High Precision Film Cutting

    Zirconia Ceramic Slotted Blades

    In electronics, OLED displays, lithium battery production, and high-end packaging, film cutting quality directly affects yield and process stability. In the continuous cutting process, the blade needs…

  • Boron Nitride Nozzles for Molten Alloy Processing

    Boron Nitride Nozzles for Molten Alloy Processing

    In the processes of melting alloys and processing high temperature metals, The nozzle is a very small but extremely crucial component. It comes into direct contact with molten metal and is constantly …

  • Boron Nitride BN Ceramic Bushings For Ion Sources

    Boron Nitride Bushing

    Boron nitride is a commonly used material in ion sources. We typically use it for: insulators, bushings, internal support structures, the reason is straightforward. It provides good insulation, handle…

Enquiry