About Hot-Pressed Aluminum Nitride (AlN)
Hot pressed aluminum nitride ceramics are sintered by vacuum hot pressing. The aluminum nitride purity is up to 99.5%(without any sintering additives), and density after hot pressing reaches 3.3g/cm3, it also has excellent thermal conductivity and high electrical insulation. The thermal conductivity can be from 90 W/(m·k) to 210 W/(m·k).
The aluminum nitride ceramic mechanical strength and hardness of the product after high temperature and high pressure are better than those of the tape casting process, dry pressing and cold isostatic press method.
Hot pressed aluminum nitride ceramics have high temperature resistance and corrosion resistance, and will not be eroded by various molten metals and molten hydrochloric acid.
Typical Application of Aluminum Nitride (AlN)
Cooling cover and magnetic resonance imaging equipment
As the substrate of high-frequency surface acoustic wave device, large-size and high-power heat dissipation insulating substrate
Electrostatic chuck and heating disk for semiconductor and integrated circuit
Infrared and microwave window materials
Crucible for compound semiconductor single crystal growth
Target of high-purity aluminum nitride film
Features
High thermal conductivity
Expansion coefficient can match with semiconductor silicon chips
High insulation resistance and voltage withstand strength
Low dielectric constant and low dielectric loss
High mechanical strength
Maximum Size of Hot Press Sintering.
Length 500 x width 500 x height < 350 mm
Outer diameter 500 x height < 500 mm
We can provide Hot Pressed Aluminum Nitride (HPAN) as required.
Order Information
Inquiries and orders should include the following information:
1.Dimensions or drawings
2.Quantity
Packing and Storage
Standard Packing: Sealed bags in carton boxes. Special package is available on request.
Typical Specification
| Purity: | >99% |
| Density: | >3.3 g/cm3 |
| Compress Strength: | >3,350MPa |
| Bending Strength: | 380MPa |
| Thermal Conductivity: | >90W/(m·K) |
| Coefficient of Thermal Expansion: | 5.0 x 10-6/K |
| Max. Temp: | 1,800°C |
| Volume Resistivity: | 7×1012 Ω·cm |
| Dielectric Strength: | 15 kV/mm |
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