Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling.
According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements.
Features
- High melting point
- High electrical insulation
- Lowdielectric constant
- Higher mechanical strength
- Superior corrosion resistance against molten metal
- Thermal and chemicalstability
- High thermal conductivity (170-220w/mk)
- Similar coefficient of thermal expansion to that of silicon (si)
Properties
| Properties | Unit | AN170 | AN230 | AN99 | AN999 |
| Color | - | Gray | Beige | Gray | Beige |
| Content of ALN | - | ≥95% | ≥96% | ≥99% | ≥99.9% |
| Bulk Density | g/cm3 | ≥3.30 | ≥3.28 | ≥3.26 | ≥3.25 |
| Flexural Strength | MPa | ≥400 | ≥300 | ≥300 | ≥300 |
| Compressive Strength | MPa | 2500 | 2000 | 2000 | 2000 |
| Hv 500g | Gpa | 10.5 | 9.0 | 9.0 | 9.0 |
| Young’s Modulus | Gpa | 300 | 300 | 280 | 280 |
| Thermal Conductivity (@20°C) | W/m·K | ≥170 | ≥220 | ~100 | ~90 |
| Specific Heat | KJ/(Kg·K) | 0.74 | 0.73 | 0.73 | 0.73 |
| C.T.E (r.t.-400°C) | 10-6/K | 4.6 | 4.6 | 4.6 | 4.6 |
| Volume Resistivity | Ω·cm 20°C | ≥1014 | ≥1013 | ≥1010 | ≥1010 |
| Dielectric Strength | KV/mm | ≥16 | ≥15 | ≥15 | ≥15 |
| Dielectric Constant (@1MHz) | - | 8.6 | 8.6 | 8.6 | 8.6 |
| Loss Tangent (@1MHz) | ×10-4 | 5 | 5 | 5 | 5 |
AlN Wafers Specification
| Properties | Unit | 6" Wafer | 8" Wafer |
| Material | - | AlN Ceramics | AlN Ceramics |
| Thermal Conductivity | W/m·K | >170 | >170 |
| Thermal Expansion Coefficient | ppm/K（300~1200K） | 4-6 | 4-6 |
| Sintering Aid | - | Y2O3 | Y2O3 |
| Diameter | mm | 150+/-0.25 | 200+/-0.25 |
| Notch Depth | mm | 1.0+0.25/-0/Locating Edge | 1.0+0.25/-0 |
| Notch Angle | - | 90°+5/-2° | 90°+5/-2° |
| Thickness | μm | 400±15 | 400±15 |
| TTV | μm | <10 | <10 |
| BOW | μm | <±30 | <±30 |
| Warp | μm | <50 | <50 |
| Ra | nm | <50 | <50 |
Applications
- Semiconductor manufacturing
- Microwave power amplifier
- Rf powerand switch
- High temperature power electronics
- Laser diode dispersionoptoelectronic devices
- High power and high frequency electronic devices
- MOSFET, IGBTpower modules
- Led packages for cooling and protecting circuits
Declaration: This is an original article of INNOVACERA®. Please indicate the source link when reprinting: https://www.innovacera.com/product/aluminum-nitride-wafer-substrates
Frequently Asked Questions
Looking for a polished aluminum nitride wafer substrates manufacturer? How do your wafers support direct wafer bonding?
Direct wafer bonding without adhesive interlayers fails when surface roughness or bow exceeds critical limits. INNOVACERA manufactures double-side lapped and polished 2″ to 8″ AlN wafer substrates with ultra-flat profiles: surface roughness Ra < 50 nm (Ra ≤ 0.05 μm), total thickness variation (TTV) < 10 μm, and warp < 50 μm. Combined with a thermal expansion coefficient closely matching silicon (4.6 × 10⁻⁶/K), our wafers eliminate interface stress and peeling in direct-bonded Si/AlN heterostructures.
Need custom AlN wafer substrates for high-power IGBT and RF modules? What thermal conductivities and thicknesses are available?
INNOVACERA supplies custom-machined AlN wafers in standard 6-inch and 8-inch diameters (or custom shapes) with thicknesses ranging from 0.125 mm to 1.0 mm. We offer premium grades featuring thermal conductivities from 170 W/m·K up to ≥220 W/m·K, providing rapid heat dissipation, low dielectric loss (5 × 10⁻⁴ @ 1 MHz), and high dielectric strength (≥16 kV/mm) to prevent thermal runaway in high-frequency MOSFET, IGBT, and laser diode modules.
