technical ceramic solutions

Hot pressing Aluminum Nitride Used For Semiconductor Fabrication Equipments

Hot pressing Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments.

Advantages of Hot pressing ALN Aluminum nitride ceramic:

– High purity
– Electrical insulator
– High thermal conductivity
– Critical thermal management material
– Reduced Particulate Generation
– Corrosion/Erosion Resistance
– Controlled Electrical Properties


Property Units Value
Flexural Strength, MOR (20 °C) MPa 300-460
Fracture Toughness MPa m1/2 2.75-6.0
Thermal Conductivity (20 °C) W/m K 100-170
Coefficient of Thermal Expansion 1 x 10-6/°C 3.3-5.5
Maximum Use Temperature °C 800
Dielectric Strength (6.35mm) ac-kV/mm 16.0-19.7
Dielectric Loss 1MHz, 25 °C 1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C) Ω-cm 1013 to 1014

Typical Application:
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
– High-power detectors, plasma generators, military radios
– Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material

Hot Pressing Aluminum Nitride

Hot Pressing Aluminum Nitride Wafer