Hot pressing Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments.
Advantages of Hot pressing ALN Aluminum nitride ceramic:
– High purity
– Electrical insulator
– High thermal conductivity
– Critical thermal management material
– Reduced Particulate Generation
– Corrosion/Erosion Resistance
– Controlled Electrical Properties
Properties:
| Property | Units | Value |
| Flexural Strength, MOR (20 °C) | MPa | 300-460 |
| Fracture Toughness | MPa m1/2 | 2.75-6.0 |
| Thermal Conductivity (20 °C) | W/m K | 100-170 |
| Coefficient of Thermal Expansion | 1 x 10-6/°C | 3.3-5.5 |
| Maximum Use Temperature | °C | 800 |
| Dielectric Strength (6.35mm) | ac-kV/mm | 16.0-19.7 |
| Dielectric Loss | 1MHz, 25 °C | 1 x 10-4 to 5 x 10-4 |
| Volume Resistivity (25°C) | Ω-cm | 1013 to 1014 |
Typical Application:
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
– High-power detectors, plasma generators, military radios
– Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material
Hot Pressing Aluminum Nitride Wafer
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