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Pyrolytic Boron Nitride (PBN) Crucible for epitaxial growth of Ⅲ-V and Ⅱ-VI semiconductor crystals

PBN MBE Crucible

Molecular beam epitaxy (MBE) is one of the most important epitaxial growth processes of group III-V and group II-VI semiconductor crystals in the world. It is a method of growing thin films layer by layer along the crystal axis of the substrate material under appropriate substrates and conditions.
PBN crucible is the best container for evaporating elements and compounds in the MBE process.

The following is the schematic diagram of MBE technology.
Schematic Diagram of MBE

Note:
Molecular Beam Epitaxy (MBE) is a technology that sprays a certain proportion of the various components and doping atoms (molecules) that make up the crystal onto the surface of the hot substrate at a certain thermal motion speed under ultra-high vacuum conditions to grow the crystal.

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