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Project Tags aluminum nitride

Aluminum Nitride Ceramic Substrates for Power Modules

Innovacera's aluminum nitride (AlN) ceramic substrates provide exceptional thermal conductivity (170-200 W/mK) for efficient heat dissipation in power modules. With a coefficient of thermal expansion closely matching silicon, they reduce thermal stress in IGBT and MOSFET assemblies. Available in various thicknesses and metallization options (DBC, DPC, thick film), these substrates enable high current densities and compact designs. Innovacera ensures high purity and precise dimensional tolerances for automotive and industrial power electronics.

Aluminum Nitride Ceramic Substrates for Power Electronics

Aluminum Nitride (AlN) ceramic substrates combine high thermal conductivity with excellent electrical insulation, making them ideal for power electronics and IGBT modules. Compared to alumina, AlN dissipates heat more efficiently while maintaining low dielectric loss. Innovacera’s advanced hot-pressing and metallization technologies ensure reliable AlN substrates for high-power, high-frequency electronic applications.

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