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AMB for new generation semiconductor

When perform brazing (for example, Ag) in the H2 environment and it requires extreme heat and energy cycle resistance, with unique high and low temperature impact resistance, AMB substrates become an ideal packaging material for new generation semiconductor (SIC) and new high power electronic devices, it retains good thermal stability even beyond 1000 cycles.

The copper thickness is 0.1-0.5mm, provides very high ampacity and very good heat spreading. This makes it a preferred material for the applications:
-IGBT
-Power Modules
-Automotive Power Electronics
-Renewable Energy
-Space and Industrial
-Others

Aluminum Nitride AMB

Aluminum Nitride (AlN) Ceramic Crucible

Due to its high thermal conductivity (≥170W/m.k), aluminum nitride ceramic crucibles can be used for heat conduction to achieve heating effects, and are widely used in electronic equipment, such as gas atomization of electronic devices.

Aluminum Nitride Crucible

Aluminum nitride crucible can also be used as containers for vacuum evaporationand metal smelting, especially suitable for vacuum evaporation crucibles for aluminum.
Because aluminum nitride ceramics are heated in a vacuum with low vapor pressure and will not pollute aluminum even if they decompose.
In the semiconductor industry, using an aluminum nitride crucible instead of a quartz crucible to synthesize arsenide can completely eliminate the pollution of Si to GaAs and obtain high-purity products.

Other Typical Applications of Aluminum Nitride Ceramics
1. Application of optical communication devices
2. Dedicated refrigerator
3. LED industry
4. Automotive electronic modules
5. High efficiency power module
6. High-frequency microwave applications

Aluminum Nitride ( AlN ) Crucible

Alumina Ceramic Parts as Photolithography Machines in the Semiconductor Industry

Alumina Ceramic parts are used for rotating parts in photolithography machines and in a vacuum state. This requires extremely high machining accuracy, and the runout of the inner circle is required to be within 2 microns.

Fine ceramics have become key components of semiconductor equipment. Especially in high-end lithography machines, in order to achieve high process accuracy, it is necessary to widely use ceramic components with good functional composite, structural stability, thermal stability, and high dimensional accuracy.Such as E-chuck, Vacumm-chuck, Block, magnetic steel skeleton water-cooled plate, reflector, guide rail, etc.

Alumina ceramic parts for photolithography machines

Another high precision ceramic parts used in the semiconductor industry Precision ceramics have become key components of semiconductor equipment, including single crystal furnaces, ion implantation equipment, photolithography machines, CVD/PVD equipment, and packaging and testing equipment.

Innovacera can provide the required materials including alumina ceramics, aluminum nitride ceramics, silicon nitride ceramics, boron nitride//pyrolytic boron nitride ceramics, silicon carbide and microporous ceramics.

Fine Ceramic used in semiconductor industry

ALN Heater Substrate For Semiconductor-Manufacturing

High thermal conductivity makes Aluminum Nitride an excellent choice where fast response or high levels of uniform temperatures are required. A clean, non-contaminating heat source, AlN’s high thermal conductivity prevents cracking.

Aluminum Nitride Ceramic Heater Plate Advantages:

High-temperature heater up to 1000°C
Excellent thermal conductivity and uniformity.
Hard, dense, non-porous, high purity substrate.
Superior moisture and chemical resistance.
Excellent size and shape capability.
Precise, repeatable pattern and distributed wattage.

Product	ALN heater substrate
Material	Aluminum nitride
Size	D120*8mm
Application	Components of vacuum devices for semiconductor-manufacturing equipments
Description	Aluminum nitride has properties of high heat resistant, high heat conductivity, excellent heat equalization and electrical insulation. ALN heater substrate is used for mainly semiconductor manufacturing devices, and also it can be used for vacuum evaporation system, sputtering machines and CVD devices.

Aluminum Nitride Ceramic Heater Plate

What Makes BeO Outstanding for Electronic Packaging

In electronic packaging for RF and microwave, people are always looking for a very good insulation material with excellent properties that can be withstand the extreme strict environmental conditions in Military and aerospace applications.

Beryllia ceramic Rod

Among them, BeO is standing out due to its high thermal conductivity and excellent electrical properties. The thermal conductivity of Beryllium oxide is up to 285 W/mk, the second ceramic material next to BeO is AlN, which is 170 W/mk, and compare to most common Al2O3 material, its thermal conductivity is only 25-30 W/mk. Therefore, BeO Ceramic become the priority materials for RF Power Transistor Packages in Thermal management and the applications that require excellent electrical isolation

Thick Flim Metalized Beryllium Oxide

As an oxide ceramic, Beryllium oxide is very stable in oxygen/moisture containing environments. The adhesion of the ceramic-to-metal joints is high and reliable. Typically, the metallization process is by Tungsten/manganese (W/Mn) coating, then plating Nickel (Ni), it can work in 800℃ at Reducing atmosphere without Nickel bubbling. BeO metallization is widely used in Microwave power circuits and Integrated Circuits (ICs).

Some misunderstandings on BeO materials is that it’s toxic, actually, only the powder of Beryllium oxide is toxic, the BeO ceramic is provided as finished product without toxic. The production workshop is strictly controlled to protect the workers’ life and safety, therefore, there is no need to worry about the health problem.

DBC Ceramic Substrate Applied to IGBT

DBC ceramic substrate has been gaining attention in the field of power electronics for its unique advantages. It is an ideal material for high-power modules such as insulated gate bipolar transistors (IGBTs) due to its excellent thermal conductivity and electrical insulation properties.

IGBTs are widely used in various applications including electric vehicles, renewable energy, and industrial automation. They are capable of handling high voltage and current levels, making them an essential component in power electronics. However, the high power density of IGBTs results in significant heat generation, which can cause performance degradation and reliability issues.

DBC Al2o3 Substrate offer a solution to these problems by providing high thermal conductivity and excellent electrical insulation. Its thermal conductivity is up to five times higher than that of traditional substrates. This means that DBC ceramic substrates can effectively dissipate heat generated by IGBTs, reducing their operating temperature and improving their performance and reliability.

Moreover, DBC DPC substrate‘s excellent electrical insulation properties help to minimize electrical interference and improve the overall safety of the system. This is particularly important in high-power applications where even a small electrical interference can cause significant damage.

DBC Ceramic Substrate Applied to IGBT

The adoption of DBC ceramic substrate in IGBTs has revolutionized the power electronics industry. It has enabled the development of high-performance and high-reliability IGBT modules that are capable of handling even higher power levels. The use of DBC Substrate has also contributed to the miniaturization of power electronic systems, making them more compact and efficient.

If you’re looking for a reliable DBC for IGBT. Contact us today to learn more about our full range of products and how we can help you.

Boron Nitride Break Rings for Continuous Casting

Continuous casting is one of the most common metal manufacturing technologies. The liquid metal flows from a tundish into the mold, in which the strand shell is formed. The metal strand is then taken off continuously or intermittently, at a speed and solidification rate appropriate to the particular alloy.

Boron nitride with high chemical resistance against a vast majority of molten metals, combined with excellent thermal shock resistance makes it ideal for various molten metal contact applications. Additionally, due to the material’s strong high-temperature strength, moderate density, and big infiltration angle with molten steel, it exhibits good resistance to molten steel erosion and abrasion, extending the break ring’s service life significantly.

The ceramic break ring comes into contact with both the melt and the solidified alloy, and must satisfy correspondingly strict requirements:

Chemical resistance to the solidified metal
Good sliding properties
High thermal shock resistance
Defined thermal conductivity
High wear resistance

Boron Nitride Break Rings are extensively used in the metal casting Industry. Innovacera manufactures different boron nitride materials and boron nitride composites matched to different metal alloys, and it increases the lifetimes of the metals.

Boron Nitride Break RingsBoron nitride Ring

Why choose Silicon nitirde ceramic igniter?

Silicon Nitride Ceramic Igniter Is The Latest And Most Advanced Application Of Hot Surface Ignition Technology
▪ No Gas Leakage Or Deflagration
After the igniter is energized to reach the ignitable temperature, the combustible mixture is introduced. In terms of timing, gas leakage and deflagration in conventional ignition methods are completely avoided.
▪ Fully Adaptable
The high-power hot-surface ignition method perfectly adapts to changes in gas type, composition, air-fuel ratio, temperature, humidity, and oil pollution.
▪ The System Runs More Reliably, And Has No Interference With Other Electrical Appliances.
No noise, no deflagration. There is no need to lower your head to confirm whether the ignition is successful or not.
▪ It completely avoids the defects of low capability with high temperature and short life of the metal heating wire. It avoids the shortcomings that the silicon carbide heating element is loose, brittle, and needs to protect against water.
▪ Silicon nitride has outstanding advantages such as high working temperature, fast heating speed, compactness and solidity, and long working life.
▪ INNOVACERA Silicon Nitride Igniter has core intellectual property rights of silicon nitride ceramic heating elements and a number of invention patents.
▪ Our company has the widest product coverage in the field of hot surface ignition technology. The working voltage of the product extends from 4V to 240V. The power is from 10W to 300W. It can be applied to the ignition and heating of all gas and fuel oil equipment. INNOVACERA has the world’s highest temperature and smallest ceramic heating technology.

Silicon Nitride Pellet Igniter

High Temperature Ceramic Heater

Silicon Nitride Ceramic Heating Element

DC type Silicon Nitride Heater

Boron Nitride Atomizer Nozzle

Boron Nitride Atomizer Nozzle For Aluminum Powder Metal Gas Atomization

Powder metallurgy is one of the fast-growing sectors in the metal processing industry. And key quality parameters in the manufacturing of sophisticated powder metals are high atomization yield and tight particle size distribution.

The boron nitride nozzle is the key component of gas atomization, which largely determines the atomization rate, production efficiency and powder quality. But the nozzles face harsh conditions such as erosion, wear, high temperature, and severe thermal shock. In this case, its material determines the process stability and component life.

Boron Nitride Nozzle

Atomizer Nozzles made by Innovacera Boron Nitride minimize clogging and metal creep, reducing the frequency of nozzle replacement. Smooth surface finish and tighter tolerances thanks to the low coefficient of friction of boron nitride provide predictable particle size distribution from batch to batch. Additionally, extreme thermal shock resistance allows boron nitride nozzles to be used without extensive pre-heating.

Feature of boron nitride nozzles:
>Good resistance to thermal shocks
>Good resistance to high temperature in vacuum & gas protection condition
>Will not react with molten metals
>Non-wetting with molten metals and the nozzles will not be stuck
>Low thermal expansion coefficient

Innovacera’s engineers are constantly exploring the improvement of nozzles, and we develops a variety of material formula for boron nitride nozzles according to various gas atomization processes and powder materials to meet the needs of different users, we will give suggestion for material selection when inquiry.

Boron Nitride Atomizer Nozzle

Hot pressing Aluminum Nitride Used For Semiconductor Fabrication Equipments

Hot pressing Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments.

Advantages of Hot pressing ALN Aluminum nitride ceramic:

– High purity
– Electrical insulator
– High thermal conductivity
– Critical thermal management material
– Reduced Particulate Generation
– Corrosion/Erosion Resistance
– Controlled Electrical Properties

Properties:

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	300-460
Fracture Toughness	MPa m1/2	2.75-6.0
Thermal Conductivity (20 °C)	W/m K	100-170
Coefficient of Thermal Expansion	1 x 10-6/°C	3.3-5.5
Maximum Use Temperature	°C	800
Dielectric Strength (6.35mm)	ac-kV/mm	16.0-19.7
Dielectric Loss	1MHz, 25 °C	1 x 10^-4 to 5 x 10^-4
Volume Resistivity (25°C)	Ω-cm	10¹³ to 10¹⁴

Typical Application:
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
– High-power detectors, plasma generators, military radios
– Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material

Hot Pressing Aluminum Nitride Wafer