INNOVACERA

technical ceramic solutions

Pyrolytic Boron Nitride/PBN Ceramic MBE Crucible for Microelectronics Industrial

The molecular beam epitaxy (MBE) method is one of the methods to produce gallium arsenide epitaxy wafers. This method can be used to produce multiple, multilayer, homogenous, heterogenous, superlattice, and quantum well epitaxy materials. High crystal purity and good chemical stability. MBE Crucible is mainly used to synthesize semiconductor single crystal and ⅲ-ⅴ group compounds by MBE method.

Pyrolytic Boron NitridePBN Ceramic MBE Crucible for Microelectronics Industrial

Pyrolytic Boron NitridePBN Ceramic MBE Crucible for Microelectronics Industrial

MBE Crucible Main Features
1. Can make large crucible (maximum diameter 12inch, maximum height 17inch);
2. High density (up to 2.2g/cm3);
3. High purity (>99.99%);
4. Not easy to crack (high interlayer strength).

 

PBN Properties

Technical Parameter BN PBN
 

 

 

 

 

Mechanical

Density g/cm3 2.2~2.3 2.1-2.19
Color White White
Water Absorption % 0 0
Vickers Hardness Gpa (Moh’s=2) (Knoop=691)
Flexural Strength (20°C) Mpa 100 243.63
Compressive Strength (20°C) Mpa 287
 

 

 

Thermal

Thermal Conductivity (20°C) W/m.K 35 43-60
Thermal Shock Resistance (20°C) Δ T(C)
Maximum Use Temperature °C 2400 2200
Electrical Volume Resistivity (25°C) Ω.cm 10 ^ 8~10 ^ 13 3.11×10 ^ 11

 

Pyrolytic Boron NitridePBN Ceramic MBE Crucible for Microelectronics Industrial (2)

Pyrolytic Boron NitridePBN Ceramic MBE Crucible for Microelectronics Industrial (2)

ENQUIRY