Aluminum Nitride (AlN) Substrates Manufacturer

Features

• High thermal conductivity (170~230W/m.K), up to 9.5 times than alumina;
• Thermal expansion coefficient close to silicon wafer, achieve high reliability of Silicon chip and thermal heat cycling;
• High electrical properties: high breakdown voltage, high electric insulation, and low dielectric constant;

Application

IGBT power module;
Optical modules;
High-power LED package;
High power heat sink, heat dissipation substrate;
Various metalized processing is available (Thin film metallization, Thick film metallization, Direct Bonded Cooper, Active Metal Brazing, Direct Plated Cooper, etc.)

Material Properties Table

Project		Test conditions	Unit	AlN
Project		Test conditions	Unit	AN-170	AN-200	AN-230
Material		-	-	AlN	AlN	AlN
Appearance		-	-	Light blue	beige	beige
Surface roughness		Ra	μm	0.2~0.75	0.2~0.75	0.2~0.75
Density		-	g/cm 3	≥3.3
Physical properties	Bending strength	3 -point bending resistance	MPa	≥400	≥350	≥300
	Vickers hardness	Load 4.9	GPa	≥10
	Water absorption	-	%	-
Thermal performance	Thermal conductivity	25℃	W/(m·k)	≥170	≥200	≥230
	Linear thermal expansion coefficient	25-500℃	x10 -6 mm/℃	4~6
	Thermal shock resistance	800℃	Time	≥10
	Specific heat	-	J/(kg·K)	720
Electrical properties	Dielectric constant	1MHz/25℃	-	8~9
	Dielectric loss	1MHz/25℃	x10 -4	≤3
	Volume resistivity	25℃	Ω·cm	> 10 14
	Breakdown voltage	-	kV/mm	> 17
Light performance	Reflectivity	Reflectivity meter	-	-
Light performance	Whiteness	Whiteness meter	-	-

Specifications and Dimensions

Size(mm) Thickness ( mm )	0.25	0.38	0.5	0.635	0.76	1.0	1.2	1.5	2.0
101.6*101.6	√	√	√	√	√	√	√	√	√
114.3*114.3	√	√	√	√	√	√	√	√	√
120*120	√	√	√	√	√	√	√	√	√
138*190			√	√	√	√	√	√	√

Processing

• Laser processing

Laser processing diagram

• Grinding and polishing sheet roughness table

Grinding and polishing sheet roughness table diagram

Project		Qualified		Special Grade
Internal dimension tolerance		±0.05mm		±0.03mm
External dimension tolerance		±0.15mm		±0.1mm
Hole tolerance (φ0.07-0.15mm)		±0.05mm		±0.02mm
Hole tolerance (φ ＞ 0.15mm)		±0.1mm		±0.02mm
Project	Surface roughness (μm )
	Qualified		Special Grade
Grinding	0.3-0.6		0.3-0.5
Fine grinding	0.1-0.4		0.1-0.3
Polishing	≤0.1		≤0.05

Declaration: This is an original article of INNOVACERA®. Please indicate the source link when reprinting: https://www.innovacera.com/product/aluminum-nitride-aln-substrates

Frequently Asked Questions

What applications are AlN ceramic substrates commonly used for?

Typical applications include IGBT and SiC power modules, semiconductor packaging, laser diode submounts, high-power LEDs, RF and microwave devices, optical modules and other thermal-management assemblies.

What information is required for an AlN substrate quotation?

For a faster evaluation, please provide the substrate dimensions, thickness, quantity, thermal conductivity grade, dimensional tolerances, flatness or warpage requirement, surface roughness, machining features and metallization requirements, preferably with a drawing.

What surface finishes are available for AlN substrates?

AlN substrates can be supplied with as-fired, ground, lapped or polished surfaces. Surface roughness should be selected according to downstream processes such as thin-film deposition, thick-film metallization, bonding or assembly.

What thermal conductivity grades are available for AlN substrates?

INNOVACERA offers aluminum nitride substrates with typical thermal conductivity grades of 170, 200 and 230 W/m·K. The appropriate grade depends on the thermal design, mechanical requirements and cost target of the application.

What thicknesses are available for aluminum nitride substrates?

Common thicknesses include 0.25, 0.38, 0.5, 0.635, 0.76, 1.0, 1.2, 1.5 and 2.0 mm. Other thicknesses can be evaluated based on substrate size, tolerance and quantity.