Silicon Nitride (Si₃N₄) Substrates

Features

• High thermal conductivity
• Thermal expansion coefficient close to silicon wafer
• High strength and toughness

 

Application

• High power IGBT power module
• High power heat sink
• Wireless module

 

Material Properties Table

Project		Test conditions	Unit	Si₃N₄
				SN-90
Material		–	–	Si₃N₄
Appearance		–	–	grey
Surface roughness		Ra	μm	0.2~0.75
Density		–	g/cm 3	≥3.2
Physical properties	Bending strength	3 -point bending resistance	MPa	≥750
	Vickers hardness	Load 4.9	GPa	≥14
	Water absorption	–	%	0
Thermal performance	Thermal conductivity	25℃	W/(m·k)	≥85
	Linear thermal expansion coefficient	25-500℃	x10 -6 mm/℃	2~4
	Thermal shock resistance	800℃	Time	≥10
	Specific heat	–	J/(kg·K)	680
Electrical properties	Dielectric constant	1MHz/25℃	–	7~8
	Dielectric loss	1MHz/25℃	x10 -4	≤4
	Volume resistivity	25℃	Ω·cm	> 10 14
	Breakdown voltage	–	kV/mm	> 15
Light performance	Reflectivity	Reflectivity meter	–	–
	Whiteness	Whiteness meter	–	–

 

Specifications and Dimensions

Material	Unit	Al₂O₃	ZTA	AlN	Si₃N₄
Effective dimensions ( A , B )	mm	50.8-190	50.8-190	50.8-190	138*190
Thickness ( T )	mm	0.25-1.5	0.25-1.5	0.25-1.0	0.25 , 0.32
Thickness tolerance	mm	±5% ( Min±0.03mm )	±5% ( Min±0.03mm )	±5% ( Min±0.03mm )	±5% ( Min ±0.03mm )
Warpage ( C )	mm	≤0.3%	≤0.3%	≤0.3%	≤0.3%
surface roughness	μm	0.2-0.6	0.2-0.5	0.2-0.75	0.2-0.75
Size, thickness and surface roughness can be customized

 

Processing

• Laser processing

• Grinding and polishing sheet roughness table

Project		Qualified		Special Grade
Internal dimension tolerance		±0.05mm		±0.03mm
External dimension tolerance		±0.15mm		±0.1mm
Hole tolerance (φ0.07-0.15mm)		±0.05mm		±0.02mm
Hole tolerance (φ ＞ 0.15mm)		±0.1mm		±0.02mm
Project	Surface roughness (μm )
	Qualified		Special Grade
Grinding	0.3-0.6		0.3-0.5
Fine grinding	0.1-0.4		0.1-0.3
Polishing	≤0.1		≤0.05