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Aluminum Nitride Ceramic Substrates

In today’s era of exploding AI computing power, 5G communication upgrades, and the transition of New Energy Vehicles (NEVs) toward 800V high voltage platforms, heat dissipation and packaging reliability have become core bottlenecks restricting system performance. Aluminum Nitride Ceramic Substrates, with their exceptional thermal conductivity, superior insulation properties, and a Coefficient of Thermal Expansion (CTE) highly matched to semiconductor materials, have become indispensable for high speed optical modules, RF devices and power semiconductors.

Aluminum Nitride Ceramic Substrates

INNOVACERA provide precision ground AlN substrates with extreme surface flatness, supporting various metallization processes such as DPC (Direct Plated Copper) and AMB (Active Metal Brazing) to ensure your products operate stably in the most demanding environments.

Advantages:

Feature Technical Value
Ultra-High Thermal Conductivity Thermal conductivity reaches 170–230 W/m·K, 7–10 times that of traditional Alumina ceramics, solving heat dissipation challenges at the source.
Matched CTE CTE is approximately 4.5 ppm/°C, highly matched with Silicon (Si) and Gallium Nitride (GaN), significantly reducing thermal stress and enhancing packaging lifespan.
Superior Electrical Insulation Features high volume resistivity and dielectric strength, ensuring electrical safety and signal integrity in high voltage and high frequency environments.
Leading Surface Technology Typical roughness Ra ≤ 0.5 μm ensures high precision and yield for chip mounting, supporting complex circuit interconnections.

Product Specifications & Selection

We offer three standard specifications with a thickness of 1.0mm, and customization is available upon request.

Model Dimensions (L×W) Recommended Applications Selection Advice
Model A 37 × 26 mm IGBT modules, Automotive OBC, Large scale optical modules Provides a larger effective cooling area, suitable for high-power, complex packaging.
Model B 35 × 22 mm 800G/1.6T Optical Modules, RF Power Amplifiers (PA) The mainstream market specification, offering a balance of performance and cost with a mature supply chain.
Model C 25 × 20 mm Automotive LED, Industrial lighting, Small-scale sub-modules High cost-effectiveness, ideal for size-constrained or cost-sensitive scenarios.

Application:

1. High Speed Optical Modules (800G / 1.6T)
– Application Value:Addresses the extreme heat flux density challenges of up to 15–20W/cm² in 1.6T modules.
– Industry Trend:Driven by AI demand, AlN substrate usage per module has increased to 3-4 pieces, making it a cornerstone of data center upgrades.

2. RF & Microwave Communication (5G / Satellite)
– Application Value:Low dielectric loss (tanδ < 0.001) design, optimized for high frequency signal transmission, providing critical cooling and support for GaN power transistors.
– Frequency Coverage:Widely used in 5G NR, Millimeter Wave (mmWave), and Satellite Communication Ka-band.

3. New Energy Vehicles (Power Electronics / IGBT)
– Application Value:Perfectly suited for 800V platforms, providing hig -reliability insulation and cooling for SiC MOSFET and IGBT modules.
– Benefits:Meets rigorous requirements for thermal cycling, thermal shock, and vibration, enhancing drivetrain efficiency.

4. High Power LED (Automotive Headlights / Industrial Curing)
– Application Value:Ideal for COB or multi chip integrated modules, effectively exporting heat to ensure high luminous efficiency and ultra long lifespan.
– Scenarios:Intelligent LED headlights, industrial UV curing, and high end commercial lighting.

Why Choose Us?

Our products are widely utilized by global leaders in communication equipment, cloud service providers, and NEV supply chains. With stringent quality control and deep technical expertise, we provide more than just high quality ceramic substrates we offer one-stop solutions from selection to metallization.

If you are looking for thermal management solutions to enhance product reliability, please contact our technical experts.


Declaration: This is an original article of INNOVACERA®. Please indicate the source link when reprinting: https://www.innovacera.com/product/aluminum-nitride-ceramic-substrates.

FAQ

High-speed optical modules (800G and 1.6T) generate extreme heat flux densities up to 15–20W/cm². Aluminum Nitride (AlN) ceramic substrates are essential in these applications because they offer an ultra-high thermal conductivity of 170–230 W/m·K (7 to 10 times higher than alumina) and a smooth surface roughness of Ra ≤ 0.5 μm. This combination ensures high-precision chip mounting and efficient heat dissipation, preventing thermal throttling and maintaining signal integrity in demanding data center environments.

For 800V New Energy Vehicle (NEV) platforms, power electronics like SiC MOSFETs and IGBT modules require robust insulation and thermal stability. AlN ceramic substrates provide excellent electrical insulation alongside a Coefficient of Thermal Expansion (CTE) of approximately 4.5 ppm/°C, which closely matches Silicon (Si) and Gallium Nitride (GaN) chips. This close CTE match minimizes thermal stress during rapid temperature changes, significantly improving the lifespan and reliability of automotive power modules under severe thermal cycling and vibration.

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