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Pyrolytic Boron Nitride (PBN) Filament Rings

PBN Filament Ring

PBN can be heated to 2300°C under ultra-high vacuum without decomposition, has high purity, more than 99.99%, does not release gas impurities and other excellent characteristics at high temperatures, these characteristics make PBN can be processed into different shapes.

Pyrolytic Boron Nitride (PBN) is frequently used to make filament rings to hold Ta wire in MBE equipment, due to its high working temperature and vacuum property. INNOVACERA can be customized according to the size, and Filament Rings are usually held in plastic bags by vacuum, and protected with heavy foam.


The key material for the growth of indium phosphide (InP)

PBN VGF Crucible

The key material for the growth of indium phosphide (InP) is single crystal-pyrolytic boron nitride (PBN)

Since 2002, scientists have jointly developed a new type of semiconductor material that can enable communication satellites to transmit data at extremely high speeds in space. This new material is called indium phosphide (InP).

InP is an important compound semiconductor material and is a new generation of microelectronics and optoelectronic functional materials following silicon (Si) and gallium arsenide (GaAs). Indium phosphide semiconductor materials have the advantages of high electronic limit drift speed, good radiation resistance, and good thermal conductivity. Compared with gallium arsenide semiconductor materials, it has the characteristics of high breakdown electric field, thermal conductivity, and average electron velocity.

InP single crystal growth methods mainly include high-pressure liquid-sealed Czochralski (LEC) and vertical gradient solidification (VGF). The key container for these two single crystal growth methods is the PBN crucible. Pyrolytic Boron Nitride (PBN) is a special ceramic material, which is produced by INNOVACERA company by chemical vapor deposition on special equipment. PBN crucible has the advantages of high purity, high-temperature resistance, acid, alkali, salt, and organic reagents, high temperature and most molten metals, semiconductors, and other materials non-wetting, non-reaction, etc., is the best container for indium phosphide single crystal growth.

InP semiconductor materials have a wide bandgap structure, and the speed of electrons passing through the indium phosphide material is fast, which means that devices made of this material can amplify signals of higher frequency or shorter wavelength. Therefore, satellite signal receivers and amplifiers made of indium phosphide chips can work at extremely high frequencies above 100 GHz, have a wide bandwidth, are less affected by the outside world, and have high stability. Therefore, indium phosphide is a more advanced semiconductor material than gallium arsenide, which may promote the development of the satellite communications industry to higher frequency bands.


Ceramic Boron Nitride Nozzle For Soft Magnetic Alloy Powder Manufacturing

Cearmic Boron Nitride Nozzle

Since the 1990s, the development of soft magnetic materials has gone through a glorious page: amorphous, nanocrystalline, metallic glass soft magnetic materials, magnetic powder cores, amorphous microcrystalline strips, and soft magnetic composite materials have paid more and more attention to the environment. Energy saving and emission reduction of countries all over the world bring hope. Soft magnetic materials are of great significance in miniaturization and high performance in the fields of automobiles, new energy, information, consumer electronics, and power electronics. If you’re looking forward to material for manufacturing magnetic alloy powder, please don’t hesitate to contact us for Boron Nitride nozzles.

Boron Nitride nozzles are made by vacuum hot-pressed sintering. The material has features of fine structure, high density, erosion resistance, abrasion resistance, metal corrosion resistance and does not crack or deform during use. It is an excellent choice for the nozzle of soft magnetic material powder production.


Performance required for ceramic substrates and packages

Aluminum Nitride Ceramic Substrates

Ceramic substrates and packages are used for semiconductor packages and electronic modules, of which the speedy operation and high integration are advancing, and sensor modules, of which the high precision and high sensitivity are advancing.

The performance required for these applications is as follows:
· Dimensional stability and flatness
· Supports various mounting forms (wire bonding, flip-chip bonding, SMT, etc.)
· The coefficient of linear expansion is close to that of silicon
· Small size with fine wiring
· Frequency characteristic
· High reliability including heat resistance and humidity resistance

INNOVACERA provides below materials of ceramic substrates:
1) 96% Al2O3 Ceramic substrates
2) 99.6% Al2O3 Ceramic substrates
3) AlN Ceramic substrates
4) Si3N4 Ceramic substrates

If you want to know more information, pls contact us.


Pyrolytic Boron Nitride (PBN) Plate

PBN Plate

PBN as it is commonly referred to stands for Pyrolytic Boron Nitride and is produced by a process called CVD Chemical Vapour Deposition, with very good resistance to thermal shock. Our Pyrolytic Boron Nitride is always manufactured to our customer’s specific requirements on shape and size.

PBN is very attractive to many industry sectors, such as:

  • Semiconductor
  • Photovoltaic
  • Coatings on Graphite
  • Crystal Growth Crucibles
  • OCVD (HB-LED) – Heater Components
  • Hi-Temp Kiln & Furnace Components

Advantages of DPC Aluminum Nitride Ceramic Substrate in VCSEL Packaging

AlN Substrate

What is a VCSEL?

VCSEL stands for Vertical Cavity Surface Emitting Laser, in this case, the laser resonator is aligned to the orthogonal direction with respect to the plane of the semiconductor substrate to allow vertical emission of light. It was invented in 1977 by Dr. Iga, the former president of the Tokyo Institute of Technology, and is now used in various fields, including data communication and sensor applications. It is also prominent in facial recognition technology in cellular devices. Compared to edge-emitting lasers, VCSELs can take advantage of batch semiconductor manufacturing processes for large volume, low-cost production. The range of wavelengths available from VCSELs is wide, and thus they have found uses in various applications.

VCSEL is widely used in consumer electronics products, automotive products, and other commercial applications such as industrial heating, environmental monitoring, medical equipment, and consumer applications such as 3D perception.

VCSEL chip power conversion efficiency is low, which means that there are certainly problems in heat dissipation, facing the problem of thermoelectric separation, and the ceramic substrate is born to solve the thermoelectric separation.

VCSEL generates large heat when running. One is that the heat needs to be emitted through the substrate in time; Secondly, the power density of the VCSEL chip is very high, so the stress caused by the thermal expansion mismatch between the chip and the substrate needs to be considered. Therefore, the realization of efficient heat dissipation, thermoelectric separation, and thermal expansion coefficient matching has become an important consideration in the selection of VCSEL component packaging substrate.

Direct copper plated ceramic substrate DPC ceramic substrate can meet the encapsulation requirements of VCSEL components. DPC ceramic substrate has many characteristics, such as high thermal conductivity, high insulation, high circuit accuracy, high surface flatness, and thermal expansion coefficient matching with the chip, etc., which rapidly occupies an important position in high power VCSEL component packaging. Because of the vertical structure of VCSEL, DPC ceramic circuit board has unique technical advantages such as high resolution, high flatness, and high reliable vertical interconnection, which is more suitable for its vertical eutectic welding.

The ceramic substrate is VCSEL packaging substrate, its importance is self-evident. The growth of DPC aluminum nitride ceramic substrate in this field is very considerable.


Pyrolytic Boron Nitride (PBN) Base Plate

PBN base plate

Pyrolytic boron nitride is a grade of hexagonal boron nitride. It is produced by the chemical vapor deposition process to create its solid body and all the boron nitride crystals grow parallel to the surface on which the vapor is deposited.

INNOVACERA produces PBN by customized design. The thickness ranges from 0.2 to 4mm. And the max dimension is around 150x150mm or Diameter of 300mm. The tolerance usually is +/-0.05mm. If you request higher tolerance, then we can evaluate your design first.

Features of PBN
* Good thermal shock resistance
* High insulation resistance
* Non-wetting
* Non-toxic

Due to its features, PBN is very often used in a vacuum environment as a base plate, insulator plate, etc. If you’re looking for a material that can work in a vacuum or MBE system, please don’t hesitate to contact us for PBN.


Electrostatic microporous ceramic chuck

Alumina and SiC Porous Ceramics

The electrostatic microporous ceramic chuck is a key part of the deep silicon etching machine. The electrostatic adsorption technology used is an advantageous technology that replaces the traditional mechanical clamping and vacuum adsorption methods. It has a wide range of fields in semiconductors, panel displays, and optics, application.

Features of electrostatic microporous ceramic chucks:
1. Can be used simultaneously in the atmosphere and vacuum environment;
2. Can adsorb conductors, semiconductors, insulators, and porous materials;
3. Simplified clamping and handling mechanism, low energy consumption for electrostatic adsorption;
4. The adsorption force is uniform, and there will be no local force during adsorption;
5. Light and soft support for large-area thin film, and there will be no scratches and wrinkles during adsorption;
6. It can be opened and closed quickly, and no potential is generated on the back of the object, and the surrounding dust is not absorbed.

Application fields: vacuum bonding in the panel industry, semiconductor chip packaging, microelectronic integrated circuits, precision optical component manufacturing, solar photovoltaic.

Principle and comparison


Boron Nitride Ceramic Nozzle For Metal Powder Gas Atomization

Boron Nitride Nozzle

Boron Nitride is an ideal material for atomizer nozzle due to its high strength, high melting point, high toughness, outstanding thermal shock resistance, excellent machinability, and low-friction properties.BN nozzles for the atomizing process may ensure a continuous flow with no blockage or breakage.

INNOVACERA provides different grades of BN materials as below. The best choice for metal powder gas atomization should be BN99, BN-B, or BN-D.

BN properties

It is an advanced ceramic material with a high melting point, is tough enough to prevent cracks, has high thermal shock resistance, and is easily machinable. In addition, molten metals cannot ‘wet’ the surface of boron nitride, which means that it is not easily clogged during the atomization process.    

Under a high vacuum, boron nitride can survive up to 1,750 °C. A gas atmosphere can push this even further to 1,900 °C. This means that boron nitride will remain solid through the melting of most metals. Boron nitride has a very low thermal expansion. Together with the high heat conductivity, this ensures that the material has very high shock resistance. It can easily withstand the rapid gradations in temperature inside the atomizer. It does not break or crack under thermal stresses.
Schematic Diagram


Pyrolytic boron nitride crucible

PBN OLED Crucibles

Pyrolytic Boron Nitride (PBN) is a kind of advanced ceramic, it is with 99.99% purity and a grade of hexagonal boron nitride. It is produced by the chemical vapor deposition process to create its solid body and all the boron nitride crystals grow parallel to the surface on which the vapor is deposited. It is the ideal material for furnace, electrical, microwave, and semiconductor components.

Pyrolytic Boron Nitride Crucible Application:
1. Semiconductor single crystal and III-V compound synthesis
2. Profiled and shaped graphite coating
3. Used to the synthesis of GaAs, GaP single crystal
4. Vaporize a variety of materials including Gallium (Ga) and Aluminum (Al) for epitaxial growth compound semiconductors.


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